Advances in Carbon Nanotube n-type Doping: Methods, Analysis and Applications
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Great advances in semiconductor technologies continue to be made with the demand for cheap, non-toxic, easily processed and environmentally friendly technologies on the rise. Single-walled carbon nanotubes (SWCNTs) are viewed as a promising candidate that satisfies these criteria however proper doping of the SWCNTs to provide n-type behaviour has been a persistent issue. In recent years, great advances have been made in providing air stable and efficient n-type doping of SWCNTs. This review presents the most recent and promising methods of n-type doping SWCNTs highlighted for their simplicity and quality of electrical properties. The analysis and major applications of these semiconductors with a focus on thermoelectric devices and transistors are discussed.
This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ This author accepted manuscript is made available following 24 month embargo from date of publication (Oct 2017) in accordance with the publisher’s archiving policy